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Silicon Carbide Transistor For Detecting Hydrocarbon GasesProposed silicon carbide variable-potential insulated-gate field-effect transistor specially designed for use in measuring concentrations of hydrocarbon gases. Devices like this prove useful numerous automotive, industrial, aeronautical, and environmental monitoring applications.
Document ID
19960018803
Acquisition Source
Legacy CDMS
Document Type
Other - NASA Tech Brief
Authors
Shields, Virgil B. (Caltech)
Ryan, Margaret A. (Caltech)
Williams, Roger M. (Caltech)
Date Acquired
August 17, 2013
Publication Date
March 1, 1996
Publication Information
Publication: NASA Tech Briefs
Volume: 20
Issue: 3
ISSN: 0145-319X
Subject Category
Physical Sciences
Report/Patent Number
NPO-19428
Accession Number
96B10108
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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