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Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.
Document ID
19960052311
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Mitchell, Sharanda L.
(Howard Univ. Washington, DC United States)
Date Acquired
August 17, 2013
Publication Date
July 1, 1996
Publication Information
Publication: HBCUs Research Conference Agenda and Abstracts
Subject Category
Solid-State Physics
Report/Patent Number
Paper-15
Accession Number
96N35508
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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