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Sixteen micrometer Infrared Hot Electron TransistorABSTRACT. We have demonstrated a bound to continuum state GaAs/Al(x)Ga(1-x)As infrared hot electron transistor which has a peak response at lambda(sub p) = 16.3 micrometers. An excellent photo-current transfer ratio of alpha(sub p) = 0.12 and very low dark current transfer ratio of alpha(sub d) = 7.2 x 10(exp 5) is achieved at a temperature of T = 60 K.
Document ID
19970020086
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
Authors
Gunapala, S. D. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Liu, J. K. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Park, J. S. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Lin, T. L. (Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Date Acquired
August 17, 2013
Publication Date
January 1, 1994
Publication Information
Publication: Quantum Well Intersubband Transition Physics and Devices
Publisher: Kluwer Academic Publishers
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.26:203699
NASA-CR-203699
Accession Number
97N71933
Funding Number(s)
CONTRACT_GRANT: NAS7-100
Distribution Limits
Public
Copyright
Public Use Permitted.
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