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Measurement of n-type Dry Thermally Oxidized 6H-SiC Metal-oxide Semiconductor Diodes by Quasistatic and High-Frequency Capacitance Versus Voltage and Capacitance Transient TechniquesDry-oxidized n-type 6H-SiC metal-oxide-semiconductor capacitors are investigated using quasistatic capacitance versus voltage (C-V), high-frequency C-V, and pulsed high-frequency capacitance transient (C-t) analysis over the temperature range from 297 to 573 K. The quasistatic C - V characteristics presented are the first reported for 6H-SiC MOS capacitors, and exhibit startling nonidealities due to nonequilibrium conditions that arise from the fact that the recombination/generation process in 6H-SiC is extraordinarily slow even at the highest measurement temperature employed. The high-frequency dark C-V characteristics all showed deep depletion with no observable hysteresis. The recovery of the high-frequency capacitance from deep depletion to inversion was used to characterize the minority-carrier generation process as a function of temperature. Zerbst analysis conducted on the resulting C-t transients, which were longer than 1000 s at 573 K, showed a generation lifetime thermal activation energy of 0.49 eV.
Document ID
19970021294
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Neudeck, P.
(NASA Lewis Research Center Cleveland, OH United States)
Kang, S.
(Case Western Reserve Univ. Cleveland, OH United States)
Petit, J.
(NYMA, Inc. Brook Park, OH United States)
Tabib-Azar, M.
(Harvard Univ. Cambridge, MA United States)
Date Acquired
August 17, 2013
Publication Date
June 15, 1994
Publication Information
Publication: Journal of Applied Physics
Publisher: American Institute of Physics
Volume: 75
Issue: 12
ISSN: 0021-8979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.15:111995
NASA-TM-111995
Accession Number
97N72035
Distribution Limits
Public
Copyright
Public Use Permitted.
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