NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
High Temperature - Thin Film Strain Gages Based on Alloys of Indium Tin OxideA stable, high temperature strain gage based on reactively sputtered indium tin oxide (ITO) was demonstrated at temperatures up to 1050 C. These strain sensors exhibited relatively large, negative gage factors at room temperature and their piezoresistive response was both linear and reproducible when strained up to 700 micro-in/in. When cycled between compression and tension, these sensors also showed very little hysteresis, indicating excellent mechanical stability. Thin film strain gages based on selected ITO alloys withstood more than 50,000 strain cycles of +/- 500 micro-in/in during 180 hours of testing in air at 1000 C, with minimal drift at temperature. Drift rates as low as 0.0009%/hr at 1000 C were observed for ITO films that were annealed in nitrogen at 700 C prior to strain testing. These results compare favorably with state of the art 10 micro-m thick PdCr films deposited by NASA, where drift rates of 0.047%/hr at 1050 C were observed. Nitrogen annealing not only produced the lowest drift rates to date, but also produce the largest dynamic gage factors (G = 23.5). These wide bandgap, semiconductor strain sensors also exhibited moderately low temperature coefficients of resistance (TCR) at temperatures up to 1100 C, when tested in a nitrogen ambient. A TCR of +230 ppm/C over the temperature range 200 C < T < 500 C and a TCR of -469 ppm/C over the temperature range 600 C < T < 1100 C was observed for the films tested in nitrogen. However, the resistivity behavior changed considerably when the same films were tested in oxygen ambients. A TCR of -1560 ppm/C was obtained over the temperature range of 200 C < T < 1100 C. When similar films were protected with an overcoat or when ITO films were prepared with higher oxygen contents in the plasma, two distinct TCR's were observed. At T < 800 C, a linear TCR of -210 ppm/C was observed and at T > 800 C, a linear TCR of -2170 DDm/C was observed. The combination of a moderately low TCR and a relatively large gage factor make these semiconducting oxide films promising candidates for the active strain elements in high temperature thin film strain gages, particularly in applications where static strain measurement is desired.
Document ID
19980206041
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Gregory, Otto J.
(Rhode Island Univ. Kingston, RI United States)
Cooke, James D.
(Rhode Island Univ. Kingston, RI United States)
Bienkiewicz, Joseph M.
(Rhode Island Univ. Kingston, RI United States)
Date Acquired
August 18, 2013
Publication Date
May 1, 1998
Subject Category
Instrumentation And Photography
Funding Number(s)
CONTRACT_GRANT: NAG3-1428
Distribution Limits
Public
Copyright
Public Use Permitted.
Document Inquiry

Available Downloads

There are no available downloads for this record.
No Preview Available