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Electrodeposited CulnSe2 Thin Film JunctionsWe have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.
Document ID
19990027949
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Raffaelle, R. P.
(Florida Inst. of Tech. Melbourne, FL United States)
Mantovani, J. G.
(Florida Inst. of Tech. Melbourne, FL United States)
Bailey, S. G.
(NASA Lewis Research Center Cleveland, OH United States)
Hepp, A. F.
(NASA Lewis Research Center Cleveland, OH United States)
Gordon, E. M.
(Wilberforce Univ. OH United States)
Haraway, R.
(Wilberforce Univ. OH United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1998
Publication Information
Publication: Materials Research Society Symposium Proceedings: Chemical Aspects of Electronic Ceramics Processing
Publisher: Materials Research Society
Volume: 495
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Other

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