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Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor TransportComplete and systematic ground-based experimental and theoretical analyses on the Physical Vapor Transport (PVT) of ZnSe and related ternary compound semiconductors have been performed. The analyses included thermodynamics, mass flux, heat treatment of starting material, crystal growth, partial pressure measurements, optical interferometry, chemical analyses, photoluminescence, microscopy, x-ray diffraction and topography as well as theoretical, analytical and numerical analyses. The experimental results showed the influence of gravity orientation on the characteristics of: (1) the morphology of the as-grown crystals as well as the as-grown surface morphology of ZnSe and Cr doped ZnSe crystals; (2) the distribution of impurities and defects in ZnSe grown crystals; and (3) the axial segregation in ZnSeTe grown crystals.
Document ID
19990040345
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Su, Ching-Hua
(NASA Marshall Space Flight Center Huntsville, AL United States)
Brebrick, R. F.
(Marquette Univ. Milwaukee, WI United States)
Burger, A.
(Fisk Univ. Nashville, TN United States)
Dudley, M.
(State Univ. of New York Stony Brook, NY United States)
Matyi, R.
(Wisconsin Univ. Madison, WI United States)
Ramachandran, N.
(Universities Space Research Association Huntsville, AL United States)
Sha, Yi-Gao
(Universities Space Research Association Huntsville, AL United States)
Volz, M.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Shih, Hung-Dah
(Texas Instruments, Inc. Austin, TX United States)
Date Acquired
August 19, 2013
Publication Date
February 1, 1999
Publication Information
Publication: NASA Microgravity Materials Science Conference
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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