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Surface and Interface Properties of PdCr/SiC Schottky Diode Gas Sensor Annealed at 425 CThe surface and interface properties of Pd(0.9,)Cr(0.1)/SiC Schottky diode gas sensors both before and after annealing are investigated using Auger electron spectroscopy (AES), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS). At room temperature the alloy reacted with SiC and formed Pd,Si only in a very narrow interfacial region. After annealing for 250 h ,It 425 C, the surface of the Schottky contact area his much less silicon and carbon contamination than that found on the surface of an annealed Pd/SiC structure. Palladium silicides (Pd(x)Si) formed at a broadened interface after annealing, but a significant layer of alloy film is still free of silicon and carbon. The chromium concentration with respect to palladium is quite uniform down to the deep interface region. A stable catalytic surface and a clean layer of Pd(0.9)Cr(0.1) film are likely responsible for significantly improved device sensitivity.
Document ID
19990056595
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Chen, Liang-Yu
(NASA Lewis Research Center Cleveland, OH United States)
Hunter, Gary W.
(NASA Lewis Research Center Cleveland, OH United States)
Neudeck, Philip G.
(NASA Lewis Research Center Cleveland, OH United States)
Knight, Dak
(Cortez 3 Service Corp. Cleveland, OH United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1998
Publication Information
Publication: Solid-State Electronics
Publisher: Elsevier Science Ltd.
Volume: 42
Issue: 12
ISSN: 0038-1101
Subject Category
Instrumentation And Photography
Distribution Limits
Public
Copyright
Other

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