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Electrostatic Discharge (ESD) Failures in Thin Film ResistorsField failures of nichrome thin film resistors have been investigated recently for several pieces of space flight hardware. These failures have involved resistance shifts ranging from a few percent to complete open circuits. Failure analysis and duplication of these failures have revealed that the failures were caused by electrostatic discharge. The failure characteristics and the circuit conditions necessary for failure have been studied for several types of thin film resistors including nichrome and tantalum nitride resistive elements. The effects of latent damage and resistive pattern design will also be discussed.
Document ID
19990066643
Acquisition Source
Goddard Space Flight Center
Document Type
Reprint (Version printed in journal)
Authors
Hull, Scott M. (NASA Goddard Space Flight Center Greenbelt, MD United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1999
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Testing and Failure Analysis
Location: Santa Clara, CA
Country: United States
Start Date: November 14, 1999
End Date: November 18, 1999
Distribution Limits
Public
Copyright
Other

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