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Characterization of Semi-Insulating CdTe Crystals Grown by Horizontal Seeded Physical Vapor TransportCdTe crystals were grown by horizontal seeded physical vapor transport technique in uncoated and boron nitride coated fused silica ampoules with the source materials near the congruent sublimation condition. The grown crystals were characterized by current-voltage measurements, low temperature photoluminescence spectroscopy, near IR transmission optical microscopy, spark source mass spectroscopy and chemical etching. The measured resistivities of the crystals were in the high-10(exp 8) ohm-cm range. Although the crystal grown in the boron nitride coating was contaminated with boron from the photoluminescence measurements, the coating yielded a single crystal with no inclusions or precipitates.
Document ID
19990102225
Acquisition Source
Marshall Space Flight Center
Document Type
Reprint (Version printed in journal)
Authors
Chattopadhyay, K.
(Fisk Univ. Nashville, TN United States)
Feth, S.
(Fisk Univ. Nashville, TN United States)
Chen, H.
(Fisk Univ. Nashville, TN United States)
Burger, A.
(Fisk Univ. Nashville, TN United States)
Su, Ching-Hua
(NASA Marshall Space Flight Center Huntsville, AL United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1998
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Other

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