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Detached Growth of Germanium and GermaniumsiliconUp to now, detached growth was observed mainly under microgravity, i.e. under the absence of hydrostatic pressure that hinders the formation of a free melt meniscus. the detached growth of germanium doped with gallium was obtained under 1 g conditions, the growth was performed in quartz-glass ampoule. Part of the crystal grew without wall contact, the detached growth was observed in-situ with a CCD-camera as well as after the growth process in form of growth lines and the formation of <111> facets on the crystal surface. GeSi crystal (oriientation: <111>, maximum silicon content: 4 at%, seed material: Ge) was grown in a pBN crucible (excluding the possibility of in-situ monitoring of the growth process). The grown crystal exhibits three growth facets, indicating also wall free growth. Surface analysis of the crystals (NDIC, SEM) and characterization of crystal segregation (EDAX, resistivity measurement) and defect structure (EPD, x-ray diffraction measurements) will be presented.
Document ID
19990109134
Acquisition Source
Marshall Space Flight Center
Document Type
Reprint (Version printed in journal)
Authors
Dold, P.
(Freiburg Univ. Germany)
Schweizer, M.
(Freiburg Univ. Germany)
Szofran, F.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Benz, K. W.
(Freiburg Univ. Germany)
Date Acquired
August 19, 2013
Publication Date
January 1, 1999
Subject Category
Solid-State Physics
Meeting Information
Meeting: ACCGE-11
Location: Tucson, AZ
Country: United States
Start Date: August 1, 1999
End Date: August 6, 1999
Distribution Limits
Public
Copyright
Other

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