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Design Issues of GaAs and AlGaAs Delta-Doped p-i-n Quantum-Well APD'sWe examine the basic design issues in the optimization of GaAs delta-doped and AlGAs delta-doped quantum-well avalanche photodiode (APD) structures using a theoretical analysis based on an ensemble Monte Carlo simulation. The devices are variations of the p-i-n doped quantum-well structure previously described in the literature. They have the same low-noise, high-gain and high-bandwidth features as the p-i-n doped quantum-well device. However, the use of delta doping provides far greater control or the doping concentrations within each stage possibly enhancing the extent to which the device can be depleted. As a result, it is expected that the proposed devices will operate at higher gain levels (at very low noise) than devices previously developed.
Document ID
20000017937
Acquisition Source
Headquarters
Document Type
Reprint (Version printed in journal)
Authors
Wang, Yang
(Georgia Inst. of Tech. Atlanta, GA United States)
Date Acquired
August 19, 2013
Publication Date
May 1, 1994
Publication Information
Publication: IEEE Journal of Quantrum Electronics
Publisher: Institute of Electrical and Electronic Engineers
Volume: 30
Issue: 5
ISSN: 0018-9197
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NAGw-2753
Distribution Limits
Public
Copyright
Other

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