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I-V Characteristics of a Ferroelectric Field Effect TransistorThere are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.
Document ID
20000027517
Acquisition Source
Marshall Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
MacLeod, Todd C.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Ho, Fat Duen
(Alabama Univ. Huntsville, AL United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1999
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Integrated Ferroelectrics
Location: Aachen
Country: Germany
Start Date: March 12, 2000
Funding Number(s)
PROJECT: RTOP 344-03-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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