NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon DioxideChemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.
Document ID
20000033688
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Opila, Elizabeth J.
(Cleveland State Univ. Cleveland, OH United States)
Nguyen, QuynhGiao N.
(Ohio Aerospace Inst. Brook Park, OH United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1998
Publication Information
Publication: Journal of American Ceramics Society
Volume: 81
Issue: 7
Subject Category
Inorganic, Organic And Physical Chemistry
Report/Patent Number
AMS Paper-C-30-96
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available