NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
InP Tunnel Junctions for InP/InGaAs Tandem Solar CellsWe report, for the first time, an epitaxially grown InP p(+)/n(++) tunnel junction. A diode with peak current densities up to 1600 Al/sq cm and maximum specific resistivities (Vp/lp - peak voltage to peak current ratio) in the range of 10(exp -4)Om sq cm is obtained. This peak current density is comparable to the highest results previously reported for lattice matched In(0.53)Ga(0.47)As tunnel junctions. Both results were obtained using chemical beam epitaxy (CBE). In this paper we discuss the electrical characteristics of these tunnel diodes and how the growth conditions influence them.
Document ID
20000033711
Acquisition Source
Headquarters
Document Type
Conference Paper
Authors
Vilela, M. F. (Houston Univ. TX United States)
Medelci, N. (International Stellar Technology, Inc. Houston, TX United States)
Bensaoula, A. (International Stellar Technology, Inc. Houston, TX United States)
Freundlich, A. (Houston Univ. TX United States)
Renaud, P. (Houston Univ. TX United States)
Date Acquired
August 19, 2013
Publication Date
October 1, 1995
Publication Information
Publication: Space Photovoltaic Research and Technology 1995
Subject Category
Energy Production And Conversion
Funding Number(s)
CONTRACT_GRANT: 93-03652-260
CONTRACT_GRANT: NASW-4093
CONTRACT_GRANT: 93-03652-243
CONTRACT_GRANT: 93-03652-236
CONTRACT_GRANT: 93-03652-224
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Document Inquiry

Available Downloads

There are no available downloads for this record.

Related Records

IDRelationTitle20000033702Collected WorksSpace Photovoltaic Research and Technology 1995
No Preview Available