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Growth of Homoepitaxial ZnO Semiconducting FilmsAs a high temperature wide-band-gap (3.3 eV at room temperature) semiconductor, ZnO has been used for many applications such as wave-guides, solar cells, and surface acoustic wave devices, Since ZnO has a 60 meV excitonic binding energy that makes it possible to produce excitonic lasing at room temperature, a recent surge of interest is to synthesize ZnO films for UV/blue/green laser diodes. These applications require films with a smooth surface, good crystal quality, and low defect density. Thus, homoepitaxial film growth is the best choice. Homoepitaxial films have been studied in terms of morphology, crystal structure, and electrical and optical properties. ZnO single crystal substrates grown by the hydrothermal method are mechanically polished and annealed in air for four hours before the films are deposited. The annealing temperature-dependence on ZnO substrate morphology and electrical properties is investigated. Films are synthesized by off-axis reactive sputtering deposition. This produces films that have very smooth surfaces with roughness less than or equal to 5 nm on a 5 microns x 5 microns area. The full width at half maximum of film theta rocking curves measured by the x-ray diffraction is slightly larger than that of the crystal substrate. Films are also characterized by measuring resistivity, optical transmittance, and photoluminescence. The properties of ZnO films grown on (0001) ZnO and (0001) sapphire substrates will also be compared and discussed.
Document ID
20000034904
Acquisition Source
Marshall Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Zhu, Shen
(Universities Space Research Association Huntsville, AL United States)
Su, C.-H.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Lehoczky, S. L.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Harris, M. T.
(Air Force Research Lab. Hanscom AFB, MA United States)
George, M. A.
(Alabama Univ. Huntsville, AL United States)
McCarty, P.
(Alabama Univ. Huntsville, AL United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1999
Subject Category
Solid-State Physics
Meeting Information
Meeting: Electronic, Electro-Optical, Photonic, and Electro-Magnetic Materials
Location: Redstone Arsenal, AL
Country: United States
Start Date: October 6, 1999
End Date: October 7, 1999
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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