The Effect of a Rotating Magnetic Field on Flow Stability During Crystal Growth

The effect of a rotating magnetic field on the stability of flow in crystal growth configurations has been experimentally modeled using liquid gallium contained in a finite cylinder and heated from below. Several distinct flow regions were determined as a function of the Rayleigh and Hartmann numbers. At low values of the Rayleigh and Hartmann numbers, a region of stationary flow exists. As the rotating magnetic field is increased, the critical Rayleigh number bounding the stationary flow region can increase by a factor of 10. However, the rotating magnetic field itself induces an instability at a critical value of the Hartmann number independent of the Rayleigh number. In the stationary flow region, the rotating magnetic field can induce fluid motion with velocities several orders of magnitude larger than typical semiconductor crystal growth velocities. Thus, a rotating magnetic field can be used to achieve the benefits of forced convection without triggering deleterious instabilities.