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An Innovative Method for Preparing Semiconductor Change Used in Crystal Growth and Shear Cell Diffusion ExperimentsAn innovative technique for machining semiconductors has been developed. This technique was used to prepare semiconductor charges for crystal growth and shear cell diffusion experiments. The technique allows brittle semiconductor materials to be quickly and accurately machined. Lightly doping the semiconductor material increases the conductivity enough to allow the material to be shaped by an electrical discharge machine (EDM).
Document ID
20000054688
Acquisition Source
Headquarters
Document Type
Reprint (Version printed in journal)
External Source(s)
doi:10.1016/S0022-0248(96)00692-6
Authors
Anrold, William A. (Case Western Reserve Univ. Cleveland, OH United States)
Matthiesen, David (Case Western Reserve Univ. Cleveland, OH United States)
Benett, Robert J. (Case Western Reserve Univ. Cleveland, OH United States)
Jayne, Douglas T. (Case Western Reserve Univ. Cleveland, OH United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1997
Publication Information
Publication: Journal of Crystal Growth
Publisher: Elsevier Science B.V.
Volume: 172
ISSN: 0022-0248
Subject Category
Solid-State Physics
Funding Number(s)
CONTRACT_GRANT: NCC3-293
Distribution Limits
Public
Copyright
Other

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