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A Monolithic W-Band Three-Stage LNA Using 0.1 Micron InAlAs/InGaAs/InP HEMT TechnologyA monolithic W-band three-stage Low Noise Amplifiers (LNA) based on 0.1 um pseudomorphic InAlAs/InGaAs/InP (High Electron Mobility Transistors (HEMTs) has been developed. this LNA demonstrated a noise figure of 4.3 dB and an associated small signal gain of 19 dB at 100 GHz with a low dc power consumption of 20 mW. This is the best reported monolithic W-band LNA performance using InP-based HEMT technology and demonstrates the potential of InP HEMT technology for higher millimeter-wave applications.
Document ID
20000063387
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
Authors
Wang, H. (TRW Space and Electronics Group Redondo Beach, CA United States)
Lai, R. (TRW Space and Electronics Group Redondo Beach, CA United States)
Chen, T. H. (TRW Space and Electronics Group Redondo Beach, CA United States)
Chow, P. D. (TRW Space and Electronics Group Redondo Beach, CA United States)
Velebir, J. (TRW Space and Electronics Group Redondo Beach, CA United States)
Tan, K. L. (TRW Space and Electronics Group Redondo Beach, CA United States)
Streit, D. C. (TRW Space and Electronics Group Redondo Beach, CA United States)
Liu, P. H. (TRW Space and Electronics Group Redondo Beach, CA United States)
Ponchak, G. (TRW Space and Electronics Group Redondo Beach, CA United States)
Date Acquired
August 19, 2013
Publication Date
January 1, 1993
Publication Information
Publication: IEEE MTT-S Digest
Publisher: Institute of Electrical and Electronics Engineers
Subject Category
Communications And Radar
Funding Number(s)
CONTRACT_GRANT: NAS3-25930
PROJECT: RTOP 632-6E-51
Distribution Limits
Public
Copyright
Other

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