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Evanescent Microwave Probes on High-Resistivity Silicon and its Application in Characterization of SemiconductorsIn this article we report the design, fabrication, and characterization of very high quality factor 10 GHz microstrip resonators on high-resistivity (high-rho) silicon substrates. Our experiments show that an external quality factor of over 13 000 can be achieved on microstripline resonators on high-rho silicon substrates. Such a high Q factor enables integration of arrays of previously reported evanescent microwave probe (EMP) on silicon cantilever beams. We also demonstrate that electron-hole pair recombination and generation lifetimes of silicon can be conveniently measured by illuminating the resonator using a pulsed light. Alternatively, the EMP was also used to nondestructively monitor excess carrier generation and recombination process in a semiconductor placed near the two-dimensional resonator.
Document ID
20000063470
Acquisition Source
Legacy CDMS
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Tabib-Azar, M.
(Case Western Reserve Univ. Cleveland, OH United States)
Akinwande, D.
(Case Western Reserve Univ. Cleveland, OH United States)
Ponchak, George E.
(NASA Lewis Research Center Cleveland, OH United States)
LeClair, S. R.
(Case Western Reserve Univ. Cleveland, OH United States)
Date Acquired
August 19, 2013
Publication Date
July 1, 1999
Publication Information
Publication: Review of Scientific Instruments
Publisher: American Inst. of Physics
Volume: 70
Issue: 7
ISSN: 0034-6748
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
PROJECT: RTOP 632-6E-51
Distribution Limits
Public
Copyright
Other

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