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An Active Substrate Driver for Enabling Mixed-Voltage SOI Systems-On-A-ChipThe current trend for space application systems is towards fully integrated systems-on-a-chip. To facilitate this drive, high-voltage transistors must reside on the same substrate as low-voltage transistors. These systems must also be radiation tolerant, particularly for space missions such as the Europa Lander and Titan Explorer. SOI CMOS technology offers high levels of radiation hardness. As a result, a high-voltage lateral MOSFET has been developed in a partially-depleted (PD) SOI technology. Utilizing high voltages causes a parasitic transistor to have non-negligible effects on a circuit. Several circuit architectures have been used to compensate for the radiation induced threshold voltage shift of the parasitic back-channel transistor. However, a new architecture for high-voltage systems must be employed to bias the substrate to voltage levels insuring all parasitic transistors remain off. An active substrate driver has been developed to accomplish task. Additional information is contained in the original extended abstract.
Document ID
20010041245
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
Authors
Jackson, S. A.
(Mississippi State Univ. Mississippi State, MS United States)
Blalock, B. J.
(Mississippi State Univ. Mississippi State, MS United States)
Mojarradi, M. M.
(Jet Propulsion Lab., California Inst. of Tech. Pasadena, CA United States)
Li, H. W.
(Idaho Univ. Moscow, ID United States)
Date Acquired
August 20, 2013
Publication Date
January 1, 2001
Publication Information
Publication: Forum on Innovative Approaches to Outer Planetary Exploration 2001-2020
Subject Category
Lunar And Planetary Science And Exploration
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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