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Plasma Reactor Modeling and Validation ExperimentsPlasma processing is a key processing stop in integrated circuit manufacturing. Low pressure, high density plum reactors are widely used for etching and deposition. Inductively coupled plasma (ICP) source has become popular recently in many processing applications. In order to accelerate equipment and process design, an understanding of the physics and chemistry, particularly, plasma power coupling, plasma and processing uniformity and mechanism is important. This understanding is facilitated by comprehensive modeling and simulation as well as plasma diagnostics to provide the necessary data for model validation which are addressed in this presentation. We have developed a complete code for simulating an ICP reactor and the model consists of transport of electrons, ions, and neutrals, Poisson's equation, and Maxwell's equation along with gas flow and energy equations. Results will be presented for chlorine and fluorocarbon plasmas and compared with data from Langmuir probe, mass spectrometry and FTIR.
Document ID
20010048410
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Meyyappan, M.
(NASA Ames Research Center Moffett Field, CA United States)
Bose, D.
(Eloret Corp. United States)
Hash, D.
(NASA Ames Research Center Moffett Field, CA United States)
Hwang, H.
(NASA Ames Research Center Moffett Field, CA United States)
Cruden, B.
(Eloret Corp. United States)
Sharma, S. P.
(NASA Ames Research Center Moffett Field, CA United States)
Rao, M. V. V. S.
Arnold, Jim
Date Acquired
August 20, 2013
Publication Date
January 1, 2001
Subject Category
Nuclear Physics
Meeting Information
Meeting: IOP Congress
Location: Brighton
Country: United Kingdom
Start Date: March 18, 2001
End Date: March 21, 2001
Sponsors: Institute of Physics
Funding Number(s)
PROJECT: RTOP 755-30-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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