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Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor TransportCrystal growth by vapor transport has several distinct advantages over melt growth techniques. Among various potential benefits from material processing in reduced gravity the followings two are considered to be related to crystal growth by vapor transport: (1) elimination of the crystal weight and its influence on the defect formation and (2) reduction of natural buoyancy-driven convective flows arising from thermally and/ or solutally induced density gradient in fluids. The previous results on vapor crystal growth of semiconductors showed the improvements in surface morphology, crystalline quality, electrical properties and dopant distribution of the crystals grown in reduced gravity as compared to the crystals grown on Earth. But the mechanisms, which are responsible for the improvements and cause the gravitational effects on the complicated and coupled processes of vapor mass transport and growth kinetics, are not well understood.
Document ID
20010057320
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Su, Ching-Hua
(NASA Marshall Space Flight Center Huntsville, AL United States)
Brebrick, Robert F.
(Marquette Univ. Milwaukee, WI United States)
Volz, Martin P.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Burger, Arnold
(Fisk Univ. Nashville, TN United States)
Dudley, Michael
(State Univ. of New York Stony Brook, NY United States)
Matyi, Richard J.
(Wisconsin Univ. Madison, WI United States)
Ramachandran, Narayanan
(Universities Space Research Association Huntsville, AL United States)
Sha, Yi-Gao
(Universities Space Research Association Huntsville, AL United States)
Volz, Martin P.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Shih, Hung-Dah
(Central Research Labs. United States)
Date Acquired
August 20, 2013
Publication Date
March 1, 2001
Publication Information
Publication: Microgravity Materials Science Conference 2000
Volume: 3
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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