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Float Zone Growth of Alloy Semiconductor Crystals: Influence of Solutocapillary ConvectionGrowth techniques with large free melt surfaces are affected by convective flows induced by gradients of the surface tension. In the case of dilute semiconductor alloys (in our case: germanium-silicon), the impact of solutocapillary convection (due to the concentration dependence of the surface tension) has to be taken into account in addition to the "normal" thermocapillary convection (due to the temperature dependence of the surface tension). Theoretical considerations, based on experimental temperature profiles, growth geometry, segregation coefficient, and measured values for the temperature and concentration coefficients of the surface tension, lead to the conclusion that for the germanium rich side of the Ge(1-x)Si(x) system, the contribution of solutocapillary convection is, at least in front of the solid-liquid interface, the dominant factor. It results in an additional flow roll with a flow direction opposite to the thermocapillary flow, similar to the ones reported for metal alloys or high Prandtl-number fluids.
Document ID
20010059244
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Dold, P.
(Freiburg Univ. Germany)
Schweizer, M.
(NASA Marshall Space Flight Center Huntsville, AL United States)
Croell, A.
(Freiburg Univ. Germany)
Campbell, T.
(Freiburg Univ. Germany)
Boschert, S.
(Freiburg Univ. Germany)
Benz, K. W.
(Freiburg Univ. Germany)
Rose, M. Franklin
Date Acquired
August 20, 2013
Publication Date
January 1, 2001
Subject Category
Solid-State Physics
Meeting Information
Meeting: ICCG13
Location: Kyoto
Country: Japan
Start Date: July 30, 2001
End Date: August 4, 2001
Funding Number(s)
CONTRACT_GRANT: NCC8-66
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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