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Investigation of Nitride Morphology After Self-Aligned Contact EtchSelf-Aligned Contact (SAC) etch has emerged as a key enabling technology for the fabrication of very large-scale memory devices. However, this is also a very challenging technology to implement from an etch viewpoint. The issues that arise range from poor oxide etch selectivity to nitride to problems with post etch nitride surface morphology. Unfortunately, the mechanisms that drive nitride loss and surface behavior remain poorly understood. Using a simple langmuir site balance model, SAC nitride etch simulations have been performed and compared to actual etched results. This approach permits the study of various etch mechanisms that may play a role in determining nitride loss and surface morphology. Particle trajectories and fluxes are computed using Monte-Carlo techniques and initial data obtained from double Langmuir probe measurements. Etched surface advancement is implemented using a shock tracking algorithm. Sticking coefficients and etch yields are adjusted to obtain the best agreement between actual etched results and simulated profiles.
Document ID
20020009761
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Hwang, Helen H.
(NASA Ames Research Center Moffett Field, CA United States)
Keil, J.
(Lam Research Corp. Fremont, CA United States)
Helmer, B. A.
(Lam Research Corp. Fremont, CA United States)
Chien, T.
(Lam Research Corp. Fremont, CA United States)
Gopaladasu, P.
(Lam Research Corp. Fremont, CA United States)
Kim, J.
(Samsung Corp. Korea, Democratic People's Republic of)
Shon, J.
(Lam Research Corp. Fremont, CA United States)
Biegel, Bryan
Date Acquired
August 20, 2013
Publication Date
April 29, 2001
Subject Category
Computer Operations And Hardware
Meeting Information
Meeting: Poster Presentation
Location: San Francisco, CA
Country: United States
Start Date: October 1, 2001
Sponsors: American Vacuum Society
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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