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Palladium Implanted Silicon Carbide for Hydrogen SensingSilicon carbide is intended for use in fabrication of high-temperature, efficient hydrogen sensors. Traditionally, when a palladium coating is applied on the exposed surface of SiC, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. We have produced both a palladium coated SiC as well as a palladium, ion implanted SiC sensor. The palladium implantation was done at 500 C into the Si face of 6H, N-type SiC at various energies, and at various fluences. Then, we measured the hydrogen sensitivity response of each fabricated sensor by exposing them to hydrogen while monitoring the current flow across the p-n junction(s), with respect to time. The sensitivity of each sensor was measured at temperatures between 27 and 300 C. The response of the SiC sensors produced by Pd implantation has revealed a completely different behaviour than the SiC sensors produced by Pd deposition. In the Pd-deposited SiC sensors as well as in the ones reported in the literature, the current rises in the presence of hydrogen at room temperature as well as at elevated temperatures. In the case of Pd-implanted SiC sensors, the current decreases in the presence of hydrogen whenever the temperature is raised above 100 C. We will present the details and conclusions from the results obtained during this meeting.
Document ID
20020018884
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Muntele, C. I.
(Alabama A & M Univ. Normal, AL United States)
Ila, D.
(Alabama A & M Univ. Normal, AL United States)
Zimmerman, R. L.
(Alabama A & M Univ. Normal, AL United States)
Muntele, L.
(Alabama A & M Univ. Normal, AL United States)
Poker, D. B.
(Alabama A & M Univ. Normal, AL United States)
Hensley, D. K.
(Alabama A & M Univ. Normal, AL United States)
Larkin, David
Date Acquired
August 20, 2013
Publication Date
November 1, 2001
Publication Information
Publication: HBCUs/OMUs Research Conference Agenda and Abstracts
Subject Category
Nonmetallic Materials
Report/Patent Number
P3
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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