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Characterization and In-Situ Monitoring of ZnSe Crystal Growth by Seeded PVT for Microgravity ApplicationsCrystal growth from the vapor phase continues to play a significant role in the production of II-VI semiconductor compounds (ZnO, ZnTe, CdTe, etc.) and SiC. As compared to melt growth methods (where available) the advantages are: (1) lower growth temperature(s); (2) reduction in defect concentration; (3) additional purification; and (4) enhanced crystal perfection. A powerful tool in determining the mechanism of PVT is microgravity. Under normal gravity conditions the transport mechanism is a superposition of diffusive and convective fluxes. Microgravity offers the possibility of studying the transport properties without the influence of convective effects. Research on the crystal growth of ZnSe by PVT (P.I.: Su of NASA/MSFC) will help to clarify the effects of convection on crystal growth. A crystal growth furnace with in-situ and real time optical monitoring capabilities was constructed and used to monitor the vapor composition and growing crystal surface morphology during the PVT growth of ZnSe. Using photoluminescence and SIMS, ex-situ, the incorporation of point defects (Zn vacancy) and impurities was found to be correlated to the gravity vector due to the influence of the convective flow. A summary of the results to date will be presented.
Document ID
20020024136
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Feth, Shari T.
(Alabama Univ. Huntsville, AL United States)
Date Acquired
August 20, 2013
Publication Date
January 1, 2001
Subject Category
Solid-State Physics
Meeting Information
Meeting: Seminar Series
Location: Freiberg
Country: Germany
Start Date: June 28, 2001
Funding Number(s)
CONTRACT_GRANT: NCC8-66
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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