Modeling of Kink-Shaped Carbon-Nanotube Schottky Diode with Gate Bias Modulation

A model is proposed for the recent gate-voltage (V(sub G)) modulation experiment of a kink-shaped carbon nanotube (NT) Schottky diode. Since larger V(sub G) increases both the forward and the reverse turn-on voltages of the diode in the experiment, we show that: (1) the rectification must occur at the kink where the metallic and the semiconducting NTs meet, and not at the electrode contact, and (2) the semiconducting NT must be n-type. The turn-on voltages are derived analytically as a function of V(sub G) with the electrode contact contribution and a good agreement is obtained with the experimental data.