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Feature Profile Evolution of SiO2 Trenches In Fluorocarbon PlasmasEtching of silicon microstructures for semiconductor manufacturing in chlorine plasmas has been well characterized. The etching proceeds in a two-part process, where the chlorine neutrals passivate the Si surface and then the ions etch away SiClx. However, etching in more complicated gas mixtures and materials, such as etching of SiO2 in Ar/C4F8, requires knowledge of the ion and neutral distribution functions as a function of angle and velocity, in addition to modeling the gas surface reactions. In order to address these needs, we have developed and integrated a suite of models to simulate the etching process from the plasma reactor level to the feature profile evolution level. This arrangement allows for a better understanding, control, and prediction of the influence of equipment level process parameters on feature profile evolution. We are currently using the HPEM (Hybrid Plasma Equipment Model) and PCMCM (Plasma Chemistry Monte Carlo Model) to generate plasma properties and ion and neutral distribution functions for argon/fluorocarbon discharges in a GEC Reference Cell. These quantities are then input to the feature scale model, Simulation of Profile Evolution by Level Sets (SPELS). A surface chemistry model is used to determine the interaction of the incoming species with the substrate material and simulate the evolution of the trench profile. The impact of change of gas pressure and inductive power on the relative flux of CFx and F to the wafer, the etch and polymerization rates, and feature profiles will be examined. Comparisons to experimental profiles will also be presented.
Document ID
20020039739
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Hwang, Helen
(NASA Ames Research Center Moffett Field, CA United States)
Govindan, T. R.
(NASA Ames Research Center Moffett Field, CA United States)
Meyyappan, M.
(NASA Ames Research Center Moffett Field, CA United States)
Arunachalam, Valli
(Motorola, Inc. United States)
Rauf, Shahid
(Motorola, Inc. United States)
Coronell, Dan
(Motorola, Inc. United States)
Carroll, Carol W.
Date Acquired
August 20, 2013
Publication Date
January 1, 1999
Subject Category
Inorganic, Organic And Physical Chemistry
Meeting Information
Meeting: 46th International Symposium of American Vacuum Society International Symposium
Location: Seattle, WA
Country: United States
Start Date: October 1, 1999
Funding Number(s)
CONTRACT_GRANT: NAS2-14031
PROJECT: RTOP 632-10-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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