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Implementation of Ferroelectric Memories for Space ApplicationsFerroelectric random access semiconductor memories (FeRAMs) are an ideal nonvolatile solution for space applications. These memories have low power performance, high endurance and fast write times. By combining commercial ferroelectric memory technology with radiation hardened CMOS technology, nonvolatile semiconductor memories for space applications can be attained. Of the few radiation hardened semiconductor manufacturers, none have embraced the development of radiation hardened FeRAMs, due a limited commercial space market and funding limitations. Government funding may be necessary to assure the development of radiation hardened ferroelectric memories for space applications.
Document ID
20020043708
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
Authors
Philpy, Stephen C.
(Celis Semiconductor Corp. Colorado Springs, CO United States)
Derbenwick, Gary F.
(Celis Semiconductor Corp. Colorado Springs, CO United States)
Kamp, David A.
(Celis Semiconductor Corp. Colorado Springs, CO United States)
Isaacson, Alan F.
(Celis Semiconductor Corp. Colorado Springs, CO United States)
Date Acquired
August 20, 2013
Publication Date
November 1, 2000
Publication Information
Publication: Non-Volatile Memory Technology Symposium 2000: Proceedings
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
CONTRACT_GRANT: JPL-1206463
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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