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Process for a High Efficiency Class D Microwave Power Amplifier Operating in the S-BandA process and product providing a High Efficiency Microwave Power Amplifier (HEMPA) which propagates S-Band microwave frequency square waves; utilizing a program simulating FETs at high DC-to-RF efficiencies, which analyses linear elements of selected FETs in a frequency domain, and non-linear elements of the FETs in a time domain, and converts the time domain values into the frequency domain, and performs DC and S-parameter simulated measurements based on predefined data for each FET. Individual FET parameters are extracted and isolated by converting the S-parameters to admittance or impedance parameters to derive FET models for each FET, which the program uses to provide a final output of a HEMPA circuit based on iterative simulations of an amplification circuit utilizing microwave topology and frequencies. Iterative simulations of the amplification circuit analyze output values of a plurality of cascaded stages of the FETs, which are arranged in a push-pull configuration.
Document ID
20020060072
Acquisition Source
Marshall Space Flight Center
Document Type
Other - Patent
External Source(s)
MFS-31455-1
Authors
William Herbert Sims, III
(Marshall Space Flight Center Redstone Arsenal, United States)
Date Acquired
August 20, 2013
Publication Date
May 14, 2002
Publication Information
Publisher: United States Patent and Trademark Office
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-6,388,512
Patent Application
US-Patent-Appl-SN-707290
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