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Simulation of Etching Profiles Using Level SetsUsing plasma discharges to etch trenches and via holes in substrates is an important process in semiconductor manufacturing. Ion enhanced etching involves both neutral fluxes, which are isotropic, and ion fluxes, which are anisotropic. The angular distributions for the ions determines the degree of vertical etch, while the amount of the neutral fluxes determines the etch rate. We have developed a 2D profile evolution simulation which uses level set methods to model the plasma-substrate interface. Using level sets instead of traditional string models avoids the use of complicated delooping algorithms. The simulation calculates the etch rate based on the fluxes and distribution functions of both ions and neutrals. We will present etching profiles of Si substrates in low pressure (10s mTorr) Ar/Cl2 discharges for a variety of incident ion angular distributions. Both ion and neutral re-emission fluxes are included in the calculation of the etch rate, and their contributions to the total etch profile will be demonstrated. In addition, we will show RIE lag effects as a function of different trench aspect ratios. (For sample profiles, please see http://www.ipt.arc.nasa.gov/hwangfig1.html)
Document ID
20020061378
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Hwang, Helen
(Thermoscience Inst. Moffett Field, CA United States)
Govindan, T. R.
(NASA Ames Research Center Moffett Field, CA United States)
Meyyappan, M.
(NASA Ames Research Center Moffett Field, CA United States)
Arnold, James O.
Date Acquired
August 20, 2013
Publication Date
January 1, 1998
Subject Category
Plasma Physics
Meeting Information
Meeting: GEC98 Meeting of the American Physical Society
Location: Maui, HI
Country: United States
Start Date: November 19, 1998
End Date: November 22, 1998
Sponsors: American Physical Society
Funding Number(s)
CONTRACT_GRANT: NAS2-14031
PROJECT: RTOP 632-10-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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