Theory and Simulation of A Novel Viscosity Measurement Method for High Temperature Semiconductor

The properties of molten semiconductors are good indicators for material structure transformation and hysteresis under temperature variations. Viscosity, as one of the most important properties, is difficult to measure because of high temperature, high pressure, and vapor toxicity of melts. Recently, a novel method was developed by applying a rotating magnetic field to the melt sealed in a suspended quartz ampoule, and measuring the transient torque exerted by rotating melt flow on the ampoule wall. The method was designed to measure viscosity in short time period, which is essential for evaluating temperature hysteresis. This paper compares the theoretical prediction of melt flow and ampoule oscillation with the experimental data. A theoretical model was established and the coupled fluid flow and ampoule torsional vibration equations were solved numerically. The simulation results showed a good agreement with experimental data. The results also showed that both electrical conductivity and viscosity could be calculated by fitting the theoretical results to the experimental data. The transient velocity of the melt caused by the rotating magnetic field was found reach equilibrium in about half a minute, and the viscosity of melt could be calculated from the altitude of oscillation. This would allow the measurement of viscosity in a minute or so, in contrast to the existing oscillation cup method, which requires about an hour for one measurement.