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A Statistical Analysis of Laser Ablated Ba(Sub 0.50)Sr(Sub 0.50)TiO(Sub 3)/LaAlO(Sub 3) Films for Microwave ApplicationsThe NASA Glenn Research Center is constructing a 616 element scanning phased array antenna using thin film Ba(sub x)Sr(sub 1-x)TiO(sub 3) based phase shifters. A critical milestone is the production of 616 identical phase shifters at 19 GHz with [asymptotically equal to]4 dB insertion loss and at least 337.5 deg phase shift with 3 percent bandwidth. It is well known that there is a direct relationship between dielectric tuning and loss due to the Kramers-Kronig relationship and that film crystallinity and strain, affected by the substrate template, play an important role. Ba(sub 0.50)Sr(sub 0.50)TiO (sub 3) films, nominally 400 nm thick, were deposited on 48 0.25 mm thick, 5 cm diameter LaAlO(sub 3) wafers. Although previous results suggested that Mn-doped films on MgO were intrinsically superior in terms of phase shift per unit loss, for this application phase shift per unit length was more important. The composition was selected as a compromise between tuning and loss for room temperature operation (e.g. crystallinity progressively degrades for Ba concentrations in excess of 30 percent). As a prelude to fabricating the array, it was necessary to process, screen, and inventory a large number of samples. Variable angle ellipsometry was used to characterize refractive index and film thickness across each wafer. Microstructural properties of the thin films were characterized using high resolution X-ray diffractometry. Finally, prototype phase shifters and resonators were patterned on each wafer and RE probed to measure tuning as a function of dc bias voltage as well as peak (0 field) permittivity and unloaded Q. The relationship among film quality and uniformity and performance is analyzed. This work presents the first statistically relevant study of film quality and microwave performance and represents a milestone towards commercialization of thin ferroelectric films for microwave applications.
Document ID
20030009819
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Romanofsky, R. R.
(NASA Glenn Research Center Cleveland, OH United States)
Varaljay, N. C.
(NASA Glenn Research Center Cleveland, OH, United States)
Alterovitz, S. A.
(NASA Glenn Research Center Cleveland, OH, United States)
Miranda, F. A.
(NASA Glenn Research Center Cleveland, OH, United States)
Mueller, C. M.
(Hadron, Inc. United States)
VanKeuls, F. W.
(Ohio Aerospace Inst. Brook Park, OH, United States)
Kim, J.
(Neocera, Inc. Beltsville, MD, United States)
Harshavardhan, K. S.
(Neocera, Inc. Beltsville, MD, United States)
Date Acquired
August 21, 2013
Publication Date
January 1, 2002
Publication Information
Publication: Materials Research Society Symposium - Proceedings
Volume: 720
ISSN: 0272-9172
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Materials Issues for Tunable RF and Microwave Devices III
Location: San Francisco, CA
Country: United States
Start Date: April 2, 2002
End Date: April 3, 2002
Sponsors: Materials Research Society
Distribution Limits
Public
Copyright
Other
Keywords
Ferroelectric thin films

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