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Vertical Electron Transport through PbS-EuS StructuresTemperature dependence of current-voltage I-V characteristics and resistivity is studied in ferromagnetic PbS-EuS semiconductor tunnel structures grown on n-PbS (100) substrates. For the structures with a single (2-4 nm thick) ferromagnetic EuS electron barrier we observe strongly non-linear I-V characteristics with an effective tunneling barrier height of 0.3-0.7 eV. The experimentally observed non-monotonic temperature dependence of the (normal to the plane of the structure) electrical resistance of these structures is discussed in terms of the electron tunneling mechanism taking into account the temperature dependent shift of the band offsets at the EuS-PbS heterointerface as well as the exchange splitting of the electronic states at the bottom of the conduction band of EuS.
Document ID
20030065832
Acquisition Source
Marshall Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Wrotek, S.
(Polish Academy of Sciences Warsaw, Poland)
Dybko, K.
(Polish Academy of Sciences Warsaw, Poland)
Morawski, A.
(Polish Academy of Sciences Warsaw, Poland)
Makosa, A.
(Polish Academy of Sciences Warsaw, Poland)
Wosinski, T.
(Polish Academy of Sciences Warsaw, Poland)
Figielski, T.
(Polish Academy of Sciences Warsaw, Poland)
Tkaczyk, Z.
(Polish Academy of Sciences Warsaw, Poland)
Lusakowska, E.
(Polish Academy of Sciences Warsaw, Poland)
Story, T.
(Polish Academy of Sciences Warsaw, Poland)
Sipatov, A. Yu
(National Technical Univ. Kharkov, Ukraine)
Date Acquired
August 21, 2013
Publication Date
January 1, 2003
Subject Category
Metals And Metallic Materials
Funding Number(s)
CONTRACT_GRANT: NAS8-02096
Distribution Limits
Public
Copyright
Other

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