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Silicon Carbide High Temperature Anemometer and Method for Assembling the SameA high temperature anemometer includes a pair of substrates. One of the substrates has a plurality of electrodes on a facing surface, while the other of the substrates has a sensor cavity on a facing surface. A sensor is received in the sensor cavity, wherein the sensor has a plurality of bondpads, and wherein the bond pads contact the plurality of electrodes when the facing surfaces are mated with one another. The anemometer further includes a plurality of plug-in pins, wherein the substrate with the cavity has a plurality of trenches with each one receiving a plurality of plug-in pins. The plurality of plug-in pins contact the plurality of electrodes when the substrates are mated with one another. The sensor cavity is at an end of one of the substrates such that the sensor partially extends from the substrate. The sensor and the substrates are preferably made of silicon carbide.
Document ID
20040013345
Acquisition Source
Glenn Research Center
Document Type
Other - Patent
Authors
Okojie, Robert S.
(NASA Glenn Research Center Cleveland, OH, United States)
Fralick, Gustave C.
(NASA Glenn Research Center Cleveland, OH, United States)
Saad, George J.
(NASA Glenn Research Center Cleveland, OH, United States)
Date Acquired
August 21, 2013
Publication Date
November 18, 2003
Subject Category
Mechanical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-Case-LEW-17222-1|US-Patent-6,647,809
Patent Application
US-Patent Appl-SN-233182
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