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A Comparative Study of Heavy Ion and Proton Induced Bit Error Sensitivity and Complex Burst Error Modes in Commercially Available High Speed SiGe BiCMOSA viewgraph presentation that reviews recent SiGe bit error test data for different commercially available high speed SiGe BiCMOS chips that were subjected to various levels of heavy ion and proton radiation. Results for the tested chips at different operating speeds are displayed in line graphs.
Document ID
20040079380
Acquisition Source
Goddard Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Marshall, Paul
(Marshall (Paul) United States)
Carts, Marty
(Raytheon Co. Greenbelt, MD, United States)
Campbell, Art
(Naval Research Lab. United States)
Reed, Robert
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Ladbury, Ray
(Orbital Sciences Corp. Greenbelt, MD, United States)
Seidleck, Christina
(Raytheon Co. Greenbelt, MD, United States)
Currie, Steve
(Mayo Foundation United States)
Riggs, Pam
(Mayo Foundation United States)
Fritz, Karl
(Mayo Foundation United States)
Randall, Barb
(Mayo Foundation United States)
Date Acquired
August 21, 2013
Publication Date
January 1, 2004
Subject Category
Computer Operations And Hardware
Meeting Information
Meeting: Single Event Effects Symposium
Location: Manhattan Beach, CA
Country: United States
Start Date: April 27, 2004
End Date: April 29, 2004
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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