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Temperature Dependence of Density, Viscosity and Electrical Conductivity for Hg-Based II-VI Semiconductor MeltsThe relaxation phenomenon of semiconductor melts, or the change of melt structure with time, impacts the crystal growth process and the eventual quality of the crystal. The thermophysical properties of the melt are good indicators of such changes in melt structure. Also, thermophysical properties are essential to the accurate predication of the crystal growth process by computational modeling. Currently, the temperature dependent thermophysical property data for the Hg-based II-VI semiconductor melts are scarce. This paper reports the results on the temperature dependence of melt density, viscosity and electrical conductivity of Hg-based II-VI compounds. The melt density was measured using a pycnometric method, and the viscosity and electrical conductivity were measured by a transient torque method. Results were compared with available published data and showed good agreement. The implication of the structural changes at different temperature ranges was also studied and discussed.
Document ID
20040082378
Acquisition Source
Marshall Space Flight Center
Document Type
Preprint (Draft being sent to journal)
Authors
Li, C.
(Alabama Univ. Birmingham, AL, United States)
Ban, H.
(Alabama Univ. Birmingham, AL, United States)
Lin, B.
(Alabama Univ. Birmingham, AL, United States)
Scripa, R. N.
(Alabama Univ. Birmingham, AL, United States)
Su, C.-H.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Lehoczky, S. L.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Date Acquired
August 21, 2013
Publication Date
January 1, 2004
Subject Category
Fluid Mechanics And Thermodynamics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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