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ICP Reactor Modeling: CF4 DischargeInductively coupled plasma (ICP) reactors are widely used now for etching and deposition applications due to their simpler design compared to other high density sources. Plasma reactor modeling has been playing an important role since it can, in principle, reduce the number of trial and error iterations in the design process and provide valuable understanding of mechanisms. Fluorocarbon precursors have been the choice for oxide etching. We have data available on CF4 from our laboratory. These are current voltage characteristics, La.ngmuir probe data, UV-absorption, and mass spectrometry measurements in a GEC-ICP reactor. We have developed a comprehensive model for ICP reactors which couples plasma generation and transport and neutral species dynamics with the gas flow equations. The model has been verified by comparison with experimental results for a nitrogen discharge in an ICP reactor. In the present work, the model has been applied to CF4 discharge and compared to available experimental data.
Document ID
20040084669
Acquisition Source
Ames Research Center
Document Type
Conference Paper
Authors
Bose, Deepak
(Thermoscience Inst. Moffett Field, CA, United States)
Govindan, T. R.
(NASA Ames Research Center Moffett Field, CA, United States)
Meyyappan, M.
(NASA Ames Research Center Moffett Field, CA, United States)
Date Acquired
August 21, 2013
Publication Date
January 1, 1999
Subject Category
Plasma Physics
Meeting Information
Meeting: Gaseous Electronics Conference
Location: Norfolk, VA
Country: United States
Start Date: October 1, 1999
Sponsors: American Physical Society
Funding Number(s)
CONTRACT_GRANT: NAS2-14031
PROJECT: RTOP 632-10-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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