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Measurement of Thin Film Integrated Passive Devices on SiC through 500 CWireless communication in jet engines and high temperature industrial applications requires FD integrated circuits (RFICs) on wide bandgap semiconductors such as Silicon Carbide (SiC). In this paper, thin-film NiCr resistors, MIM capacitors, and spiral inductors are fabricated on a high purity semi-insulating 4H-SiC substrate. The devices are experimentally characterized through 50 GHz at temperatures of up to 500 C and the equivalent circuits are deembedded from the measured data. It is shown that the NiCr resistors are stable within 10% to 300 C while the capacitors have a value stable within 10% through 500 C.
Document ID
20040111959
Acquisition Source
Glenn Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Schwartz, Zachary D.
(Analex Corp. Cleveland, OH, United States)
Ponchak, George E.
(NASA Glenn Research Center Cleveland, OH, United States)
Alterovitz, Samuel A.
(NASA Glenn Research Center Cleveland, OH, United States)
Downey, Alan N.
(NASA Glenn Research Center Cleveland, OH, United States)
Chevalier, Christine T.
(Analex Corp. Cleveland, OH, United States)
Date Acquired
August 21, 2013
Publication Date
January 1, 2004
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: IEEE International Microwave Symposium
Location: Fort Worth, TX
Country: United States
Start Date: June 6, 2004
End Date: June 11, 2004
Sponsors: Institute of Electrical and Electronics Engineers
Funding Number(s)
OTHER: 22-714-70-18
Distribution Limits
Public
Copyright
Public Use Permitted.
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