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Lateral Movement of Screw Dislocations During Homoepitaxial Growth and Devices Yielded Therefrom Free of the Detrimental Effects of Screw DislocationsThe present invention is related to a method that enables and improves wide bandgap homoepitaxial layers to be grown on axis single crystal substrates, particularly SiC. The lateral positions of the screw dislocations in epitaxial layers are predetermined instead of random, which allows devices to be reproducibly patterned to avoid performance degrading crystal defects normally created by screw dislocations.
Document ID
20040120994
Acquisition Source
Glenn Research Center
Document Type
Other - Patent
External Source(s)
LEW-17237-1
Authors
Philip G Neudeck ORCID
(Glenn Research Center Cleveland, United States)
J Anthony Powell
(Glenn Research Center Cleveland, United States)
Date Acquired
August 22, 2013
Publication Date
August 31, 2004
Publication Information
Publisher: United States Patent and Trademark Office
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-6,783,592
Patent Application
US-Patent-Appl-SN-268749
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