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Advanced Computational Modeling of Vapor Deposition in a High-pressure ReactorIn search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.
Document ID
20040129585
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Cardelino, Beatriz H.
(Spelman Coll. Atlanta, GA, United States)
Moore, Craig E.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
McCall, Sonya D.
(Spelman Coll. Atlanta, GA, United States)
Cardelino, Carlos A.
(Georgia Inst. of Tech. Atlanta, GA, United States)
Dietz, Nikolaus
(Georgia State Univ. Atlanta, GA, United States)
Bachmann, Klaus
(North Carolina State Univ. Raleigh, NC, United States)
Date Acquired
August 22, 2013
Publication Date
January 1, 2004
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 2004 Conference on Advances in Internet Technologies and Applications (CAITA)
Location: West Lafayette, IN
Country: United States
Start Date: July 8, 2004
End Date: July 11, 2004
Distribution Limits
Public
Copyright
Other

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