NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Back to Results
Electrical Conductivity of HgTe at High TemperaturesThe electrical conductivity of HgTe was measured using a rotating magnetic field method from 300 K to the melting point (943 K). A microscopic theory for electrical conduction was used to calculate the expected temperature dependence of the HgTe conductivity. A comparison between the measured and calculated conductivities was used to obtain the estimates of the temperature dependence of Gamma(sub 6)-Gamma(sub 8) energy gap from 300 K to 943 K. The estimated temperature coefficient for the energy gap was comparable to the previous results at lower temperatures (less than or equal to 300 K). A rapid increase in the conductivity just above 300 K and a subsequent decrease at 500 K is attributed to band crossover effects. This paper describes the experimental approach and some of the theoretical calculation details.
Document ID
20050110216
Acquisition Source
Marshall Space Flight Center
Document Type
Conference Paper
Authors
Li, C.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Lehoczky, S. L.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Su, C.-H.
(NASA Marshall Space Flight Center Huntsville, AL, United States)
Scripa, R. N.
(Alabama Univ. Birmingham, AL, United States)
Date Acquired
August 22, 2013
Publication Date
January 1, 2004
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: 2004 Materials Research Society Fall Meeting
Location: Boston, MA
Country: United States
Start Date: November 29, 2004
End Date: December 3, 2004
Sponsors: Materials Research Society
Distribution Limits
Public
Copyright
Other

Available Downloads

There are no available downloads for this record.
No Preview Available