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Characterization of Dual-Band Infrared Detectors for Application to Remote SensingNASA Langley Research Center (LaRC), in partnership with the Rensselaer Polytechnic Institute (RPI), developed photovoltaic infrared (IR) detectors suitable at two different wavelengths using Sb-based material systems. Using lattice-matched InGaAsSb grown on GaSb substrates, dual wavelength detectors operating at 1.7 and 2.5 micron wavelengths can be realized. P-N junction diodes are fabricated on both GaSb and InGaAsSb materials. The photodiode on GaSb detects wavelengths at 1.7 micron and the InGaAsSb detector detects wavelengths at 2.2 micron or longer depending on the composition. The films for these devices are grown by metal-organic vapor phase epitaxy (MOVPE). The cross section of the independently accessed back-to-back photodiode dual band detector consists of a p-type substrate on which n-on-p GaInAsSb junction is grown, followed by a p-on-n GaSb junction. There are three ohmic contacts in this structure, one to the p-GaSb top layer, one to the n-GaSb/n-GaInAsSb layer and one to the p-type GaSb substrate. The common terminal is the contact to the n-GaSb/n-GaInAsSb layer. The contact to the n-GaSb/p-GaInAsSb region of the photodiode in the dual band is electrically connected and is accessed at the edge of the photodiode. NASA LaRC acquired the fabricated dual band detector from RPI and characterized the detector at its Detector Characterization Laboratory. Characterization results, such as responsivity, noise, quantum efficiency, and detectivity will be presented.
Document ID
20050232858
Acquisition Source
Langley Research Center
Document Type
Preprint (Draft being sent to journal)
Authors
Abedin, M. Nurul
(NASA Langley Research Center Hampton, VA, United States)
Refaat, Tamer F.
(Science and Technology Corp. Hampton, VA, United States)
Xiao, Yegao
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Bhat, Ishwara
(Rensselaer Polytechnic Inst. Troy, NY, United States)
Date Acquired
August 23, 2013
Publication Date
January 1, 2005
Subject Category
Earth Resources And Remote Sensing
Report/Patent Number
SPIE Paper 5883-08
Meeting Information
Meeting: SPIE 50th Annual Meeting
Location: San Diego, CA
Country: United States
Start Date: July 31, 2005
End Date: August 4, 2005
Funding Number(s)
OTHER: 23-258-70-SL
Distribution Limits
Public
Copyright
Public Use Permitted.
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