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Study of strain boundary conditions and GaAs buffer sizes in InGaAs quantum dotsNEMO 3-D has been developed for the simulation of electronic structure in self-assembled InGaAs quantum dots on GaAs substrates. Typical self-assembled quantum dots in that material system contain about 0.5 to 1 million atoms. Effects of strain by the surrounding GaAs buffer modify the electronic structure inside the quantum dot significantly and a large GaAs buffer must be included in the strain and electronic structure.
Document ID
20060028966
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Oyafuso, F.
Klimeck, G.
Boykin, T. B.
Bowen, R. C.
Allmen, P. von
Date Acquired
August 23, 2013
Publication Date
May 25, 2003
Distribution Limits
Public
Copyright
Other
Keywords
transport tunneling quantum

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