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Dose measurement based on threshold shift in MOSFET arrays in commercial SRAMSA new method using an array of MOS transistors isdescribed for measuring dose absorbed from ionizingradiation. Using the array of MOSFETs in a SRAM, a direct measurement of the number of MOS cells which change as a function of applied bias on the SRAM. Since the input and output of a SRAM used as a dosimeter is completely digital, the measurement of dose is easily accessible by a remote processing system.
Document ID
20060029832
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Scheick, L. Z.
Swift, G.
Date Acquired
August 23, 2013
Publication Date
July 15, 2002
Subject Category
Space Radiation
Distribution Limits
Public
Copyright
Other
Keywords
SRAM dosimetry microdosimetry threshold shift

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