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Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beamThe capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.
Document ID
20060031570
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
Authors
Hartley, F.
Malek, C.
Neogi, J.
Date Acquired
August 23, 2013
Publication Date
June 18, 2001
Distribution Limits
Public
Copyright
Other
Keywords
fast prototyping of high-aspect ratio high-resolution x-ray masks

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