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Angular dependence of DRAM upset susceptibilityHeavy ion irradiations of two types of commercial DRAMs reveal unexpected angular responses. One device's cross section varied by two orders of magnitude with azimuthal angle. Accurate prediction of space rates requires accommodating this effect.
Document ID
20060033200
Acquisition Source
Jet Propulsion Laboratory
Document Type
Conference Paper
External Source(s)
hdl:2014/15832
Authors
Guertin, S. M.
Swift, G. M.
Edmonds, L. D.
Date Acquired
August 23, 2013
Publication Date
July 11, 2000
Subject Category
Space Radiation
Distribution Limits
Public
Copyright
Other
Keywords
DRAM angle SEU multiple bit upset DRAM upsets

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