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Electron-hole correlations in semiconductor quantum dots with tight-binding wave fuctionsThe electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect-gap material, and InAs and CdSe as examples of typical III-V and II-VI direct-gap materials.
Document ID
20060033526
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
hdl:2014/16241
Authors
Seungwon, L.
Jonsson, L.
Wilkins, J.
Bryant, G.
Klimeck, G.
Date Acquired
August 23, 2013
Publication Date
May 15, 2001
Publication Information
Publication: Physical review B
Volume: 63
Issue: 19
Distribution Limits
Public
Copyright
Other
Keywords
Electron-hole quantum

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