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Si Tight-Binding Parameters from Genetic Algorithm FittingQuantum mechanical simulations of carrier transport in Si require an accurate model of the complicated Si bandstructure. Tight-binding models are an attractive method of choice since they bear the full electronic structure symmetry in them and they can discretize a realistic device on an atomic scale.
Document ID
20060034413
Acquisition Source
Jet Propulsion Laboratory
Document Type
Reprint (Version printed in journal)
External Source(s)
Authors
Klimeck, G.
Bowen, R.
Boykin, T.
Salazar-Lazaro, C.
Cwik, T.
Stoica, A.
Date Acquired
August 23, 2013
Publication Date
October 1, 1999
Publication Information
Publication: Superlattices and Microstructures
Distribution Limits
Public
Copyright
Other
Keywords
genetic algorithm Tight-Binding Parameters

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